View BB506C_4293648.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BB506C
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
REJ03G1246-0100 Rev.1.00 Jun. 27, 2005
Features
* Built in Biasing Circuit; To reduce using parts cost & PC board space. * High gain PG = 24 dB typ. (f = 900 MHz) * Low noise NF = 1.4 dB typ. (f = 900 MHz) * Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) * Provide mini mold packages: CMPAK-4 (SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4)
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Notes:
1. Marking is "FS-". 2. BB506C is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Symbol VDS VG1S VG2S Ratings 6 +6 -0 +6 -0 30 250 150 -55 to +150 Unit V V V mA mW C C
Drain current ID Channel power dissipation PchNote3 Channel temperature Tch Storage temperature Tstg Notes: 3. Value on the glass epoxy board (50 mm x 40 mm x 1 mm).
Rev.1.00
Jun. 27, 2005,
page 1 of 8
BB506C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| Ciss Coss PG NF Min 6 +6 +6 -- -- 0.5 0.4 12 27 1.2 0.7 19 -- Typ -- -- -- -- -- 0.8 0.7 16 32 1.6 1.1 24 1.4 Max -- -- -- +100 +100 1.1 1.0 20 38 2.0 1.5 29 2.1 Unit V V V nA nA V V mA mS pF pF dB dB Test Conditions ID = 200 A, VG1S = VG2S = 0 IG1 = +10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V, ID = 100 A VDS = 5 V, VG1S = 5 V, ID = 100 A VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 k VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 k, f = 1 kHz VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 k, f = 1 MHz VDS = 5 V, VG1 = 5V, VG2S = 4 V RG = 100 k, f = 900 MHz
Bias Circuit for Operating Items (ID(op), |yfs|, Ciss, Coss, NF, PG)
VG2 Gate 2 Gate 1 RG VG1
Drain A ID
Source
Rev.1.00
Jun. 27, 2005,
page 2 of 8
BB506C
900 MHz Power Gain, Noise Figure Test Circuit
VG1 VG2 C4 C5 VD C6
R1
R2 C3 G2
R3 D L3
RFC Output (50 ) L4
Input (50 ) L1 L2
G1 S
C1
C2
C1, C2 C3 C4 to C6 R1 R2 R3
: : : : : :
Variable Capacitor (10 pF MAX) Disk Capacitor (1000 pF) Air Capacitor (1000 pF) 100 k 47 k 4.7 k
L1: 10
L2:
10
26
(1 mm Copper wire) Unit : mm
8
21 L4: 29
3
L3:
18
10
7
7
RFC : f1 mm Copper wire with enamel 4 turns inside dia 6 mm
Rev.1.00
Jun. 27, 2005,
page 3 of 8
10
3
BB506C
Main Characteristics
Maximum Channel Power Dissipation Curve
Channel Power Dissipation Pch* (mW)
400 25
Typical Output Characteristics
VG2S = 4 V VDS = VG1 20
82 k
68 k
300
ID (mA)
15
100 k
120 k
200
Drain Current
10
k
150 k
100
5
RG
=1
80
0
50
100
150
200
0 0
1
2
3
4
5
Ambient Temperature Ta (C)
* Value on the glass epoxy board (50 mm x 40 mm x 1 mm)
Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Gate1 Voltage
|yfs| (mS)
50 VDS = 5 V VG2S =4 V RG = 100 k f = 1 kHz
Drain Current vs. Gate1 Voltage
25 VDS = 5 V VG2S = 4 V RG = 100 k
ID (mA)
20
40
Forward Transfer Admittance
4V
15
4V 3V
3V 2V
30 20
Drain Current
10 5
VG2S = 1 V
0 0 1 2 3 4 5
10 V G2S = 0
2V 1V
0
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Drain Current vs. Gate Resistance
25
5
Input Capacitance vs. Gate2 to Source Voltage
VDS = 5 V VG1 = 5 V RG = 100 k f = 1 MHz
Input Capacitance Ciss (pF)
100 1000
Drain Current ID (mA)
20
4
15
3
10 5 VDS = VG1 = 5 V VG2S = 4 V 0 10
2
1
0 0 1 2 3 4
Gate Resistance RG (k)
Gate2 to Source Voltage VG2S (V)
Rev.1.00
Jun. 27, 2005,
page 4 of 8
BB506C
Power Gain vs. Gate Resistance
50
VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz
Noise Figure vs. Gate Resistance
5
VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz
Power Gain PG (dB)
NF (dB) Noise Figure
40
4
30
3
20
2
10
1
0 10
0 100 1000 10 100 1000
Gate Resistance RG (k) Power Gain vs. Gate2 to Source Voltage
25
5
Gate Resistance RG (k)
Noise Figure vs. Gate2 to Source Voltage
VDS = 5 V VG1 = 5 V RG = 100 k f = 900 MHz
NF (dB) Noise Figure
4 VDS = 5 V VG1 =5 V RG = 100 k f = 900 MHz 1 2 3
Power Gain PG (dB)
20
4
15
3 2
10
5
1
0
0 1 2 3 4
Gate2 to Source Voltage VG2S (V) Gain Reduction vs. Gate2 to Source Voltage
40 VDS = 5 V VG1 = 5 V RG = 100 k f = 900 MHz
Gate2 to Source Voltage
VG2S (V)
Gain Reduction GR (dB)
35 30 25 20 15 10 5 0 0 1 2
3
4
Gate2 to Source Voltage VG2S (V)
Rev.1.00
Jun. 27, 2005,
page 5 of 8
BB506C
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5 -120 -90 -60 180 0 150 30 1 1.5 2 120
S21 Parameter vs. Frequency
90
Scale: 5 / div.
60
-150
-30
Test condition: VDS = 5 V, VG1 = 5 V, VGS2 = 4 V, RG = 100 k 0.05 to 1.05 GHz (0.05 GHz step)
Test condition: VDS = 5 V, VG1 = 5 V, VGS2 = 4 V, RG = 100 k 0.05 to 1.05 GHz (0.05 GHz step)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2 30 .2
Scale: 0.05 / div.
60
150
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45 -10
-.2 -150 -30 -.4 -2 -120 -90 -60 -.6 -.8 -1 -1.5
-5 -4 -3
Test condition: VDS = 5 V, VG1 = 5 V, VGS2 = 4 V, RG = 100 k 0.05 to 1.05 GHz (0.05 GHz step)
Test condition: VDS = 5 V, VG1 = 5 V, VGS2 = 4 V, RG = 100 k 0.05 to 1.05 GHz (0.05 GHz step)
Rev.1.00
Jun. 27, 2005,
page 6 of 8
BB506C
S parameter
(VDS = 5 V, VG1 = 5 V, VG2S = 4 V, RG = 100 k, Zo = 50 )
Freq (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 Mag 0.995 0.991 0.992 0.987 0.984 0.981 0.975 0.967 0.964 0.958 0.951 0.939 0.933 0.922 0.916 0.900 0.892 0.883 0.866 0.858 Deg -3.3 -6.2 -9.3 -12.4 -15.5 -18.6 -21.7 -24.8 -27.9 -30.8 -33.9 -37.0 -40.3 -43.5 -46.5 -49.6 -52.8 -56.2 -59.2 -62.0 Mag 3.28 3.26 3.28 3.26 3.27 3.24 3.23 3.24 3.22 3.22 3.22 3.20 3.20 3.20 3.19 3.19 3.18 3.18 3.17 3.16 S21 Deg 177.9 175.5 173.7 171.3 170.0 167.3 165.8 163.3 161.9 159.4 157.9 155.4 154.1 150.7 150.7 146.7 146.4 142.8 142.3 139.8 Mag 0.001 0.001 0.002 0.002 0.004 0.003 0.004 0.004 0.004 0.006 0.006 0.004 0.004 0.007 0.007 0.006 0.005 0.005 0.006 0.006 S12 Deg 17.6 75.6 73.8 79.5 116.5 89.6 76.3 87.0 91.9 89.0 100.4 84.2 85.4 80.4 93.5 108.8 122.9 120.3 104.0 121.3 Mag 0.991 0.996 0.995 0.997 0.995 0.993 0.992 0.989 0.991 0.987 0.988 0.985 0.984 0.983 0.981 0.979 0.978 0.975 0.970 0.970 S22 Deg -1.8 -3.6 -5.2 -7.0 -8.6 -10.3 -11.8 -13.9 -15.5 -17.0 -18.9 -20.4 -22.2 -23.7 -25.5 -27.2 -28.9 -30.6 -32.3 -33.8
Rev.1.00
Jun. 27, 2005,
page 7 of 8
BB506C
Package Dimensions
JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g
D e2 b1 B B e
A Q c
E
HE LP L
Reference Symbol Dimension in Millimeters
A xM
A S A b
L1
A3 e2 e
A2
A
l1
yS b b2 c c1 c A-A Section
A1 S b1 b3 c1 l1
b5
e1
A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q
Min 0.8 0 0.8 0.25 0.35
Nom
0.1 1.8 1.15
1.8 0.3 0.1 0.2
0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1
Max 1.1 0.1 1.0 0.4 0.5
0.15 2.2 1.35
b4 B-B Section Pattern of terminal position areas
2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9
1.5 0.2
Ordering Information
Part Name BB506CFSQuantity 3000 Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.1.00
Jun. 27, 2005,
page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

▲Up To Search▲

Price & Availability of BB506C

	To Download BB506C Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .